Modular mainframe layout for supporting multiple semiconductor process modules or chambers

ABSTRACT

Methods and apparatus for bonding chiplets to substrates are provided herein. In some embodiments, a multi-chamber processing tool for processing substrates, includes: a first equipment front end module (EFEM) having one or more loadports for receiving one or more types of substrates, a second EFEM having one or more loadports; and a plurality of atmospheric modular mainframes (AMMs) coupled to each other and having a first AMM coupled to the first EFEM and a last AMM coupled to the second EFEM, wherein each of the plurality of AMMs include a transfer chamber and one or more process chambers coupled to the transfer chamber, wherein the transfer chamber includes a buffer, and wherein the transfer chamber includes a transfer robot, the one or more process chambers, and a buffer disposed in an adjacent AMM of the plurality of AMMs.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part of co-pending U.S. patentapplication Ser. No. 17/177,882, filed Feb. 17, 2021, which is hereinincorporated by reference in its entirety.

FIELD

Embodiments of the present disclosure generally relate to substrateprocessing equipment.

BACKGROUND

Substrates undergo various processes during the fabrication ofsemiconductor integrated circuit devices. Some of these processesinclude wafer dicing, in which a processed wafer is placed on a dicingtape and is cut or separated into a plurality of die or chiplets. Oncethe wafer has been diced, the chiplets typically stay on the dicing tapeuntil they are extracted and bonded to a substrate. Conventionprocessing tools for cleaning, dicing, and bonding chiplets to asubstrate generally include multiple tools or a single linear robothoused in a mainframe tool. A number of chambers or process modules maybe coupled to the mainframe and generally determine a length of themainframe and the single linear robot. However, the tool comprising asingle linear robot housed in the mainframe provides limitedexpandability and processing throughput.

Accordingly, the inventors have provided improved multi-chamberprocessing tools for processing substrates.

SUMMARY

Methods and apparatus for bonding chiplets to substrates are providedherein. In some embodiments, a multi-chamber processing tool forprocessing substrates, includes: a first equipment front end module(EFEM) having one or more loadports for receiving one or more types ofsubstrates, a second EFEM having one or more loadports for receiving oneor more types of substrates on a side of the multi-chamber processingtool opposite the first EFEM; and a plurality of atmospheric modularmainframes (AMMs) coupled to each other and having a first AMM coupledto the first EFEM and a last AMM coupled to the second EFEM, whereineach of the plurality of AMMs include a transfer chamber and one or moreprocess chambers coupled to the transfer chamber, wherein the transferchamber includes a buffer configured to hold a plurality of the one ormore types of substrates, and wherein the transfer chamber includes atransfer robot configured to transfer the one or more types ofsubstrates between the buffer, the one or more process chambers, and abuffer disposed in an adjacent AMM of the plurality of AMMs.

In some embodiments, a multi-chamber processing tool for processing asubstrate, includes: a first equipment front end module (EFEM) havingone or more first loadports for receiving a first type of substrate, oneor more second loadports for receiving a second type of substrate havinga plurality of chiplets, and a EFEM robot configured to transfer thefirst type of substrate and the second type of substrate; a second EFEMhaving one or more second loadports for receiving the first type ofsubstrate, one or more second loadports for receiving a second type ofsubstrate having a plurality of chiplets, and an EFEM robot configuredto transfer the first type of substrate and the second type ofsubstrate; and a plurality of s coupled to each other and having a firstAMM coupled to the first EFEM and a last AMM coupled to the second EFEM,wherein each of the plurality of AMMs include a transfer chamber and aone or more process chambers comprising at least one of a wet cleanchamber, a plasma chamber, a degas chamber, a radiation chamber, or abonder chamber, coupled to the transfer chamber, wherein the transferchamber includes a buffer configured to hold one or more of the firsttype of substrates and one or more of the second type of substrates, andwherein the transfer chamber includes a transfer robot configured totransfer the first type of substrate and the second type of substratebetween the buffer, the one or more process chambers, and a bufferdisposed in an adjacent AMM of the plurality of AMMs; and wherein theone or more process chambers of a first AMM of the plurality of AMMsincludes at least one of a plasma chamber or a degas chamber andincludes a wet clean chamber, a second AMM of the plurality of AMMscoupled to the first AMM includes at least one of a plasma chamber or adegas chamber, and a third AMM of the plurality of AMMs coupled to thesecond AMM includes one or more bonder chambers configured to remove theplurality of chiplets from the second type of substrate and bond theplurality of chiplets onto the first type of substrate.

In some embodiments, a method of bonding a plurality of chiplets onto asubstrate, includes: loading a first type substrate onto a firstloadport of an equipment front end module (EFEM) of a multi-chamberprocessing tool having a plurality of AMMs; using an EFEM robot totransfer the first type substrate to a first buffer disposed in a firstAMM coupled to the EFEM; serially transferring the first type ofsubstrate from the first buffer to a first wet clean chamber to performa cleaning process, to a first degas chamber to perform a degas processto dry the first type of substrate, to a first plasma chamber to performa plasma etch process to remove unwanted material form the first type ofsubstrate, and to a bonder chamber; using the EFEM robot to transfer asecond type of substrate, having a plurality of chiplets, to the firstbuffer; serially transferring the second type of substrate from thefirst buffer to a second wet clean chamber to perform a cleaningprocess, to a second degas chamber to perform a degas process to dry thesecond type of substrate, to a second plasma chamber to perform a plasmaetch process to remove unwanted material from the second type ofsubstrate, to a radiation chamber to perform a radiation process toweaken bonds between the plurality of chiplets and second type ofsubstrate, and to the bonder chamber; transferring at least some of theplurality of chiplets from the second type of substrate to the firsttype of substrate in the bonder chamber; bonding the at least some ofthe plurality of chiplets to the first type of substrate in the bonderchamber; and loading the first type of substrate with the bondedplurality of chiplets from a last AMM to a loadport of a second EFEM ofthe multi-chamber processing tool.

Other and further embodiments of the present disclosure are describedbelow.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure, briefly summarized above anddiscussed in greater detail below, can be understood by reference to theillustrative embodiments of the disclosure depicted in the appendeddrawings. However, the appended drawings illustrate only typicalembodiments of the disclosure and are therefore not to be consideredlimiting of scope, for the disclosure may admit to other equallyeffective embodiments.

FIG. 1 depicts a schematic top view of a multi-chamber processing toolfor bonding chiplets to a substrate in accordance with at least someembodiments of the present disclosure.

FIG. 2 depicts a schematic top view of a multi-chamber processing toolfor bonding chiplets to a substrate in accordance with at least someembodiments of the present disclosure.

FIG. 3 depicts a schematic top view of a multi-chamber processing toolfor bonding chiplets to a substrate in accordance with at least someembodiments of the present disclosure.

FIG. 4 depicts a schematic top view of a multi-chamber processing toolfor bonding chiplets to a substrate arranged in an T-shapedconfiguration in accordance with at least some embodiments of thepresent disclosure.

FIG. 5 depicts a schematic top view of a multi-chamber processing toolfor bonding chiplets to a substrate arranged in a U-shaped configurationin accordance with at least some embodiments of the present disclosure.

FIG. 6 depicts a second type of substrate in accordance with at leastsome embodiments of the present disclosure.

FIG. 7 depicts an isometric view of a simplified atmospheric modularmainframe in accordance with at least some embodiments of the presentdisclosure.

FIG. 8 depicts a flow chart of a method of bonding chiplets to asubstrate in accordance with at least some embodiments of the presentdisclosure.

FIG. 9 depicts a schematic top view of a multi-chamber processing toolfor bonding chiplets to a substrate in accordance with at least someembodiments of the present disclosure.

FIG. 10 depicts a schematic top view of a multi-chamber processing toolfor bonding chiplets to a substrate in accordance with at least someembodiments of the present disclosure.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. The figures are not drawn to scale and may be simplifiedfor clarity. Elements and features of one embodiment may be beneficiallyincorporated in other embodiments without further recitation.

DETAILED DESCRIPTION

Embodiments of methods and apparatus for processing substrates areprovided herein. The apparatus generally comprises a multi-chamberprocessing tool that is modular and includes one or more equipment frontend modules (EFEM) for loading substrates into and out of themulti-chamber processing tool that are coupled to a plurality of AMMsconfigured to perform one or more processing steps on the substrates.The one or more processing steps may be any suitable step inmanufacturing or packaging integrated circuits. For example, the one ormore processing steps may be configured to perform one or more of thefollowing: a bonding process to bond a plurality of chiplets onto thesubstrates, a plasma dicing or singulation process, a substrate cleaningprocess, a substrate plating or coating process, or the like. Theplurality of AMMs generally can interface with the EFEM to hand offsubstrates to one or more process chambers associated with each of theAMMs.

Each of the plurality of AMMs include a transfer robot, allowing thetransfer robots to work in parallel to advantageously increaseprocessing throughput by facilitating processing of multiple substratesat the same time. For the example process of bonding the plurality ofchiplets onto the substrates, the multi-chamber processing tooladvantageously allows for bonding a plurality of chiplets havingdifferent sizes onto the substrates and allows for bonding of theplurality of chiplets in multiple layers on the substrates within themulti-chamber processing tool.

FIG. 1 depicts a schematic top view of a multi-chamber processing tool100 for bonding chiplets to a substrate in accordance with at least someembodiments of the present disclosure. The multi-chamber process tool100 generally includes an equipment front end module (EFEM) 102 and aplurality of AMMs 110 that are serially coupled to the EFEM 102. Theplurality of AMMs 110 are configured to shuttle one or more types ofsubstrates 112 from the EFEM 102 through the multi-chamber process tool100 and perform one or more processing steps to the one or more types ofsubstrates 112. Each of the plurality of AMMs 110 generally include atransfer chamber 116 and one or more process chambers 106 coupled to thetransfer chamber 116 to perform the one or more processing steps. Theplurality of AMMs 110 are coupled to each other via their respectivetransfer chamber 116 to advantageously provide modular expandability andcustomization of the multi-chamber process tool 100. As depicted in FIG.1, the plurality of AMMs 110 comprise three AMMs, where a first AMM 110a is coupled to the EFEM 102, a second AMM 110 b is coupled to the firstAMM 110 a, and a third AMM 110 c is coupled to the second AMM 110 b.

The EFEM 102 includes a plurality of loadports 114 for receiving one ormore types of substrates 112. In some embodiments, the one or more typesof substrates 112 include 200 mm wafers, 300 mm wafers, 450 mm wafers,tape frame substrates, carrier substrates, silicon substrates, glasssubstrates, or the like. In some embodiments, the plurality of loadports114 include at least one of one or more first loadports 114 a forreceiving a first type of substrate 112 a or one or more secondloadports 114 b for receiving a second type of substrate 112 b. In someembodiments, the first type of substrates 112 a have a different sizethan the second type of substrates 112 b. In some embodiments, thesecond type of substrates 112 b include tape frame substrates or carriersubstrates. In some embodiments, the second type of substrates 112 binclude a plurality of chiplets disposed on a tape frame or carrierplate. In some embodiments, the second type of substrates 112 b may holddifferent types and sizes of chiplets. As such, the one or more secondloadports 114 b may have different sizes or receiving surfacesconfigured to load the second type of substrates 112 b having differentsizes.

In some embodiments, the plurality of loadports 114 are arranged along acommon side of the EFEM 102. Although FIG. 1 depicts a pair of the firstloadports 114 a and a pair of the second loadports 114 b, the EFEM 102may include other combinations of loadports such as one first loadport114 a and three second loadports 114 b.

In some embodiments, the EFEM 102 includes a scanning station 108 havingsubstrate ID readers for scanning the one or more types of substrates112 for identifying information. In some embodiments, the substrate IDreaders include a bar code reader or an optical character recognition(OCR) reader. The multi-chamber processing tool 100 is configured to useany identifying information from the one or more types of substrates 112that are scanned to determine process steps based on the identifyinginformation, for example, different process steps for the first type ofsubstrates 112 a and the second type of substrates 112 b. In someembodiments, the scanning station 108 may also be configured forrotational movement to align the first type of substrates 112 a or thesecond type of substrates 112 b. In some embodiments, the one or more ofthe plurality of AMMs 110 include a scanning station 108.

An EFEM robot 104 is disposed in the EFEM 102 and configured totransport the first type of substrates 112 a and the second type ofsubstrates 112 b between the plurality of loadports 114 to the scanningstation 108. The EFEM robot 104 may include substrate end effectors forhandling the first type of substrates 112 a and second end effectors forhandling the second type of substrates 112 b. The EFEM robot 104 mayrotate or rotate and move linearly.

FIG. 6 depicts a second type of substrate 112 b in accordance with atleast some embodiments of the present disclosure. In some embodiments,the second type of substrate 112 b is a tape frame substrate thatgenerally comprises a layer of backing tape 602 surrounded by a tapeframe 604. In use, a plurality of chiplets 606 can be attached to thebacking tape 302. The plurality of chiplets 606 are generally formed viaa singulation process that dices a semiconductor wafer 610 into theplurality of chiplets 606 or dies. In some embodiments, the tape frame604 is made of metal, such as stainless steel. The tape frame 604 mayhave one or more notches 608 to facilitate alignment and handling. For asemiconductor wafer 610 having a 300 mm diameter, the tape frame 604 mayhave a width of about 340 mm to about 420 mm and a length of about 340mm to about 420 mm. The second type of substrate 112 b may alternativelybe a carrier plate configured to have the plurality of chiplets 606coupled to the carrier plate.

Referring back to FIG. 1, the one or more process chambers 106 may besealingly engaged with the transfer chamber 116. The transfer chamber116 generally operates at atmospheric pressure but may be configured tooperate at vacuum pressure. For example, the transfer chamber 116 may bea non-vacuum chamber configured to operate at an atmospheric pressure ofabout 700 Torr or greater. Additionally, while the one or more processchambers 106 are generally depicted as orthogonal to the transferchamber 116, the one or more process chambers 106 may be disposed at anangle with respect to the transfer chamber 116 or a combination oforthogonal and at an angle. For example, the second AMM 110 b depicts apair of the one or more process chambers 106 disposed at an angle withrespect to the transfer chamber 116.

The transfer chamber 116 includes a buffer 120 configured to hold one ormore first type of substrates 112 a. In some embodiments, the buffer 120is configured to hold one or more of the first type of substrates 112 aand one or more of the second type of substrates 112 b. The transferchamber 116 includes a transfer robot 126 configured to transfer thefirst type of substrates 112 a and the second type of substrates 112 bbetween the buffer 120, the one or more process chambers 106, and abuffer disposed in an adjacent AMM of the plurality of AMMs 110. Forexample, the transfer robot 126 in the first AMM 110 a is configured totransfer the first type of substrates 112 a and the second type ofsubstrates 112 b between the first AMM 110 a and the buffer 120 in thesecond AMM 110 b. In some embodiments, the buffer 120 is disposed withinthe interior volume of the transfer chamber 116, advantageously reducingthe footprint of the overall tool. In addition, the buffer 120 can beopen to the interior volume of the transfer chamber 116 for ease ofaccess by the transfer robot 126. In some embodiments, the buffer 120may also be configured to perform a radiation process on the second typeof substrates 112 b.

FIG. 7 depicts an isometric view of a transfer chamber 116 of theplurality of AMMs 110 in accordance with at least some embodiments ofthe present disclosure. The transfer chamber 116 is depicted insimplified form to describe the key components. The transfer chamber 116generally includes a frame 710 that is covered with plates (top plate712 shown in FIG. 7, side plates not shown) to enclose the transferchamber 116. In some embodiments, the transfer chamber 116 has a widthless than a length. The top plate 712 (or side plates) may include anaccess opening 716 that is selectively opened or closed for servicingthe transfer chamber 116. The side plates include openings at interfaceswith at least one of the one or more process chambers 106, the EFEM 102,or adjacent transfer chambers. While FIG. 7 shows the transfer chamber116 having a rectangular or box shape, the transfer chamber 116 may haveany other suitable shape, such as cylindrical, hexagonal, or the like.The one or more process chamber 106 may be coupled orthogonally to thetransfer chamber 116 or may be coupled at an angle with respect to thetransfer chamber 116.

The transfer chamber 116 may have one or more environmental controls.For example, an airflow opening (e.g., access opening 716) in thetransfer chamber 116 may include a filter to filter the airflow enteringthe transfer chamber 116. Other environmental controls may include oneor more of humidity control, static control, temperature control, orpressure control.

The transfer robot 126 is generally housed within the frame 710. Thetransfer robot 126 is configured for rotational or rotational and linearmovement within the transfer chamber 116. In some embodiments, thetransfer robot 126 moves linearly via rails on a floor of the transferchamber 116 or via wheels under the transfer robot 126. The transferrobot 126 includes a telescoping arm 720 having one or more endeffectors 730 that can extend into the one or more process chamber 106and into adjacent AMMs. In some embodiments, the one or more endeffectors 730 comprise substrate end effectors for handling the firsttype of substrates 112 a and second end effectors for handling thesecond type of substrates 112 b. In some embodiments, for a transferchamber 116 having a length of about 2.0 to about 2.5 meters, thetelescoping arm 720 may have a stroke length of up to about 1.0 meter.In some embodiments, the EFEM robot 104 is the same type andconfiguration as the transfer robot 126 for enhanced commonality ofparts.

The buffer 120 is housed within the frame 710, for example, in aninterior volume of the frame 710. In some embodiments, the buffer 120 isconfigured to rotate to align the first type of substrates 112 a and thesecond type of substrates 112 b in a desired manner. In someembodiments, the buffer is configured to hold the one or more types ofsubstrates 112 in a vertical stack advantageously reducing the footprintof the transfer chamber 116. For example, in some embodiments, thebuffer 120 includes a plurality of shelves 722 for storing or holdingone or more first type of substrates 112 a and one or more second typeof substrates 112 b. In some embodiments, the plurality of shelves 722are disposed in a vertically spaced apart configuration. In someembodiments, the buffer 120 includes six shelves. In some embodiments,the plurality of shelves comprises two shelves to accommodate the secondtype of substrates 112 b.

Referring back to FIG. 1, the one or more process chambers 106 mayinclude atmospheric chambers that are configured to operate underatmospheric pressure and vacuum chambers that are configured to operateunder vacuum pressure. Examples of the atmospheric chambers maygenerally include wet clean chambers, radiation chambers, heatingchambers, metrology chambers, bonding chamber, or the like. Examples ofvacuum chambers may include plasma chambers. The types of atmosphericchambers discussed above may also be configured to operate under vacuum,if needed. The one or more process chambers 106 may be any processchambers or modules needed to perform a bonding process, a dicingprocess, a cleaning process, a plating process, or the like.

In some embodiments, the one or more process chambers 106 of each of theplurality of AMMs 110 include at least one of a wet clean chamber 122, aplasma chamber 130, a degas chamber 132, a radiation chamber 134, or abonder chamber 140 such that the multi-chamber processing tool 100includes at least one wet clean chamber 122, at least one plasma chamber130, at least one degas chamber 132, at least one radiation chamber 134,and at least one bonder chamber 140.

The wet clean chamber 122 is configured to perform a wet clean processto clean the one or more types of substrates 112 via a fluid, such aswater. The wet clean chamber 122 may include a first wet clean chamber122 a for cleaning the first type of substrates 112 a or a second wetclean chamber 122 b for cleaning the second type of substrates 112 b.

q The degas chamber 132 is configured to perform a degas process toremove moisture from the substrates 112 via for example, a hightemperature baking process. In some embodiments, the degas chamber 132includes a first degas chamber 132 a for the first type of substrates112 a and a second degas chamber 132 b for the second type of substrates112 b.

The plasma chamber 130 may be configured to perform an etch process toremove unwanted material, for example organic materials and oxides, fromthe first type of substrates 112 a or the second type of substrates 112b. In some embodiments, the plasma chamber 130 includes a first plasmachamber 130 a for the first type of substrates 112 a and a second plasmachamber 130 b for the second type of substrates 112 b. The plasmachamber 130 may also be configured to perform an etch process to dicethe substrates 112 into chiplets. In some embodiments, the plasmachamber 130 may be configured to perform a deposition process, forexample, a physical vapor deposition process, a chemical vapordeposition process, or the like, to coat the first type of substrates112 a or the second type of substrates 112 b with a desired layer ofmaterial.

The radiation chamber 134 is configured to perform a radiation processon the second type of substrates 112 b to reduce adhesion between theplurality of chiplets 606 and the backing tape 602. For example, theradiation chamber 134 may be an ultraviolet radiation chamber configuredto direct ultraviolet radiation at the backing tape 602 or a heatingchamber configured to heat the backing tape 602. The reduced adhesionbetween the plurality of chiplets 606 and the backing tape 602facilitates easier removal of the plurality of chiplets 606 from thesecond type of substrates 112 b. In some embodiments, the radiationchamber 134 is configured to hold and process multiple second type ofsubstrates 112 b.

The bonder chamber 140 is configured to transfer and bond at least aportion of the plurality of chiplets 606 to one of the first type ofsubstrates 112 a. The bonder chamber 140 generally includes a firstsupport 142 to support one of the first type of substrates 112 a and asecond support 144 to support one of the second type of substrates 112b.

In some embodiments, the one or more process chambers 106 of the firstAMM 110 a includes at least one of a plasma chamber 130 or a degaschamber 132 and includes a wet clean chamber 122. In the illustrativeexample of FIG. 1, the first AMM 110 a includes a first plasma chamber130 a and a second plasma chamber 130 b on a first side of the first AMM110 a. In some embodiments, the first AMM 110 a includes a first wetclean chamber 122 a and a second wet clean chamber 122 b on a secondside of the first AMM 110 a opposite the first side. In someembodiments, the second AMM includes a radiation chamber 134 and atleast one of a plasma chamber 130 or a degas chamber 132.

In some embodiments, a last AMM of the plurality of AMM 110, for examplethe third AMM 110 c of FIG. 1, includes one or more bonder chambers 140(two shown in FIG. 1). In some embodiments, a first of the two bonderchambers is configured to remove and bond chiplets having a first sizeand a second of the two bonder chambers is configured to remove and bondchiplets having a second size.

In some embodiments, any of the plurality of AMMs 110 include ametrology chamber 118 configured to take measurements of the one or moretypes of substrates 112. In FIG. 1, the metrology chamber 118 is shownas a part of the second AMM 110 b coupled to the transfer chamber 116 ofthe second AMM 110 b. However, the metrology chamber 118 may be coupledto any transfer chamber 116 or within the transfer chamber 116.

A controller 180 controls the operation of any of the multi-chamberprocessing tools described herein, including the multi-chamberprocessing tool 100. The controller 180 may use a direct control of themulti-chamber processing tool 100, or alternatively, by controlling thecomputers (or controllers) associated with the multi-chamber processingtool 100. In operation, the controller 180 enables data collection andfeedback from the multi-chamber processing tool 100 to optimizeperformance of the multi-chamber processing tool 100. The controller 180generally includes a Central Processing Unit (CPU) 182, a memory 184,and a support circuit 186. The CPU 182 may be any form of ageneral-purpose computer processor that can be used in an industrialsetting. The support circuit 186 is conventionally coupled to the CPU182 and may comprise a cache, clock circuits, input/output subsystems,power supplies, and the like. Software routines, such as a method asdescribed below may be stored in the memory 184 and, when executed bythe CPU 182, transform the CPU 182 into a specific purpose computer(controller 180). The software routines may also be stored and/orexecuted by a second controller (not shown) that is located remotelyfrom the multi-chamber processing tool 100.

The memory 184 is in the form of computer-readable storage media thatcontains instructions, when executed by the CPU 182, to facilitate theoperation of the semiconductor processes and equipment. The instructionsin the memory 184 are in the form of a program product such as a programthat implements the method of the present principles. The program codemay conform to any one of a number of different programming languages.In one example, the disclosure may be implemented as a program productstored on a computer-readable storage media for use with a computersystem. The program(s) of the program product define functions of theaspects (including the methods described herein). Illustrativecomputer-readable storage media include, but are not limited to:non-writable storage media (e.g., read-only memory devices within acomputer such as CD-ROM disks readable by a CD-ROM drive, flash memory,ROM chips, or any type of solid-state non-volatile semiconductor memory)on which information is permanently stored; and writable storage media(e.g., floppy disks within a diskette drive or hard-disk drive or anytype of solid-state random access semiconductor memory) on whichalterable information is stored. Such computer-readable storage media,when carrying computer-readable instructions that direct the functionsof the methods described herein, are aspects of the present principles.

FIG. 2 depicts a schematic top view of a multi-chamber processing tool200 for bonding chiplets to a substrate in accordance with at least someembodiments of the present disclosure. The multi-chamber processing tool200 is similar to the multi-chamber processing tool 100, with adifferent configuration of the one or more process chambers 106. Themulti-chamber processing tool 200 includes three AMMs. In someembodiments, the first AMM 110 a includes a first degas chamber 132 aconfigured to degas the first type of substrate 112 a and a second degaschamber 132 b configured to degas the second type of substrate 112 b onthe first side of the first AMM 110 a and two second wet clean chambers122 b on a second side of the first AMM 110 a opposite the first side.In some embodiments, the second side of the first AMM 110 a mayalternatively include two first wet clean chambers 122 a or one firstwet clean chamber 122 a and one second wet clean chamber 122 b.

In some embodiments, the second AMM 110 b includes a first plasmachamber 130 a and a second plasma chamber 130 b on a first side of thesecond AMM 110 b. In some embodiments, a second side of the second AMM110 b opposite the first side includes two first wet clean chambers 122a. In some embodiments, the second side of the second AMM 110 b includesa first wet clean chamber 122 a and a radiation chamber 134. In someembodiments, the one or more process chambers 106 of the last AMM, forexample, the third AMM 110 c of FIG. 2, includes two bonder chambers 140and a radiation chamber 134. In some embodiments, the radiation chamber134 is disposed along a width of the transfer chamber 116. The placementof the radiation chamber 134 in the third AMM 110 c advantageouslyprovides the multi-chamber processing tool 200 with an additional twowet clean chambers 122 as compared to the multi-chamber processing tool100.

FIG. 3 depicts a schematic top view of a multi-chamber processing tool300 for bonding chiplets to a substrate in accordance with at least someembodiments of the present disclosure. The multi-chamber processing tool300 is similar to the multi-chamber processing tool 200 except that themulti-chamber processing tool 300 includes a fourth AMM 110 d and afifth AMM 110 e. In some embodiments, the plurality of AMMs 110 includeone or more AMMs having one or more bonder chambers 140 disposed betweenthe first AMM 110 a and a last AMM, for example the fifth AMM 110 e ofFIG. 3.

In some embodiments, the multi-chamber processing tool 300 includes sixbonder chambers 140, where the six bonder chambers 140 are configured toprocess a same type and size of chiplets or different types and sizes ofchiplets. In some embodiments, the fifth AMM 110 e includes a radiationchamber 134. The modular configuration of the multi-chamber processingtool 300 advantageously facilitates concurrent bonding or additionalsubstrates and additional types and sizes of chiplets as compared to themulti-chamber processing tool 200 of FIG. 2.

FIG. 4 depicts a schematic top view of a multi-chamber processing tool400 for bonding chiplets to a substrate arranged in a T-shapedconfiguration in accordance with at least some embodiments of thepresent disclosure. The T-shaped configuration of the multi-chamberprocessing tool 400 advantageously reduces a length of the tool ascompared to a linear layout such as with the multi-chamber processingtool 300, while having a same or similar number of process chambers asmulti-chamber processing tool 300.

In some embodiments, as shown in FIG. 4, the plurality of AMMs 110include a junction module 410 that is coupled to AMMs on three sides ofthe junction module 410. In some embodiments, the plurality of AMMs 110comprise a first AMM 110 a coupled to the EFEM 102, a second AMM 110 bcoupled to the first AMM 110 a at one end and a junction module 410 atan opposite end. In some embodiments, a third AMM 110 c and a fourth AMM110 d are coupled to the junction module 410 at opposite sides of thejunction module 410. In some embodiments, a fifth AMM 110 e is coupledto the fourth AMM 110 d at an end opposite the junction module 410. Insome embodiments, the transfer robot 126 in the junction module 410 isconfigured to transfer the one or more types of substrates 112 betweenthe buffer 120 in the junction module 410 and the buffers in the thirdAMM 110 c and the fourth AMM 110 d. In some embodiments, the junctionmodule 410 includes a radiation chamber 134 on a side of the junctionmodule 410 opposite the second AMM 110 b.

FIG. 5 depicts a schematic top view of a multi-chamber processing tool500 for bonding chiplets to a substrate arranged in a U-shapedconfiguration in accordance with at least some embodiments of thepresent disclosure. The multi-chamber processing tool 500 includes theplurality of AMMs 110 arranged in a U-shaped configuration. As shown inFIG. 5, a first set of three AMMs 110 a-110 c are arranged linearly, asecond set of three AMMs 110 d-110 f extend perpendicularly from thefirst set, and a third set of three AMMs 110 g-110 i extendperpendicularly form the second set and parallel to the first set. TheU-shaped configuration of the multi-chamber processing tool 500advantageously reduces a length of the tool as compared to linearconfigurations such as with the multi-chamber processing tool 300 ofFIG. 3.

In some embodiments, a second EFEM 502 is coupled to a last AMM of theplurality of AMMs 110. For example, in FIG. 5, the last AMM, or ninthAMM 110 i is coupled to the second EFEM 502. In some embodiments, thesecond EFEM 502 includes one or more loadports 514 and an EFEM robot104. In some embodiments, the one or more loadports 514 include one ormore first loadports 514 a for receiving the first type of substrate 112a and one or more second loadports 514 b for receiving a second type ofsubstrate 112 b having a plurality of chiplets. In some embodiments, theone or more loadports 514 include four second loadports 514 b and nofirst loadports 514 a. The addition of the second EFEM 502advantageously adds additional loadports and an additional scanningstation 108 to the tool, increasing processing throughput. The additionof the second EFEM 502 also advantageously allow the one or more typesof substrates 112 to enter the multi-chamber processing tool 500 fromone end and exit from another end without the need to pass back to theone end, reducing handling and increasing processing throughput. Reducedhandling of the one or more types of substrates 112 advantageously mayreduce particle generation and contamination in the multi-chamberprocessing tool 500. In some embodiments, each of the EFEM 102 and thesecond EFEM 502 have two or more loadports each. In some embodiments,the EFEM 102 and the second EFEM 502 together comprise two or more ofthe first loadports 114 a and four or more of the second loadports 116b. In some embodiments, the EFEM 102 and the second EFEM 502 togethercomprise two of the first loadports 114 a and six of the secondloadports 116 b. The second EFEM 502 may be added to any of themulti-chamber processing tools described herein.

In some embodiments, with a U-shaped configuration, one of the AMMs ofthe plurality of AMMs 110 may include two buffers 120. FIG. 5 depictsthe sixth AMM 110 f having the two buffers 120, however any of thesecond set of three AMMs 110 d-110 f may include the two buffers 120. Insome embodiments, the third AMM 110 c and the seventh AMM 110 g mayinclude a radiation chamber 134. The configurations of the one or moreprocess chambers 106 associated with the plurality of AMMs 110 in any ofFIG. 1 through FIG. 5 are exemplary and the one or more process chambers106 may be rearranged in any suitable manner for a desired applicationin any of the multi-chamber processing tools 100, 200, 300, 400, 500,900, 1000.

FIG. 8 depicts a flow chart of a method 800 of bonding chiplets to asubstrate in accordance with at least some embodiments of the presentdisclosure. At 802, the method 800 includes loading a substrate (e.g.,first type of substrates 112 a) onto a loadport (e.g., substrateloadport 114 a) of an equipment front end module (EFEM) (e.g., equipmentfront end module 102) of a multi-chamber processing tool (e.g.,multi-chamber processing tool 100, 200, 300, 400, 500, 900, 1000) havinga plurality of AMMs (e.g., plurality of AMMs 110).

At 804, the method 800 includes using an EFEM robot (e.g., EFEM robot104) to transfer the first type of substrate to a first buffer (e.g.,buffer 120) disposed in a first AMM (e.g., first AMM 110 a) coupled tothe EFEM. In some embodiments, an EFEM robot is used to transfer thefirst type of substrate to a scanning station (e.g., scanning station108) in the EFEM, prior to transferring to the first buffer, to recordidentifying information to determine process steps based on theidentifying information. For example, the identifying information maydictate at least one of how many different types of chiplets are to bebonded to the first type substrate, how many layers of chiplets are tobe bonded to the first type of substrate, or the desired arrangement ofthe chiplets when bonded to the first type of substrate. The identifyinginformation may also dictate which pre-bonding process steps arenecessary (e.g., wet clean, plasma etch, degas, ultraviolet process, orthe like) and process parameters (e.g., duration, power, temperature, orthe like). The identifying information may be read via a substrate IDreader, such as an OCR reader or a bar code reader.

At 806, the method 800 includes serially transferring, via respectivetransfer robots (e.g., transfer robot 126) in each of the plurality ofAMMs, the first type of substrate from the first buffer to a first wetclean chamber (e.g., first wet clean chamber 122 a) to perform acleaning process, to a first degas chamber (e.g., first degas chamber132 a) to perform a degas process to dry the first type of substrate, toa first plasma chamber (e.g., first plasma chamber 130 a) to perform aplasma etch process to remove unwanted material from the first type ofsubstrate, and to a bonder chamber (e.g., bonder chamber 140).

At 808, the method 800 includes using the EFEM robot to transfer asecond type of substrate (e.g., second type of substrates 112 b), havinga plurality of chiplets, to the first buffer from a second loadport(e.g., one or more second loadports 114 b). In some embodiments, an EFEMrobot is used to transfer the second type of substrate to the scanningstation in the EFEM, prior to transferring to the first buffer, torecord identifying information to determine process steps based on theidentifying information. The identifying information may be read via anOCR reader or a bar code reader.

At 810, the method 800 includes serially transferring, via respectivetransfer robots in each of the plurality of AMMs the second type ofsubstrate from the first buffer to a second wet clean chamber (e.g.,second wet clean chamber 122 b) to perform a cleaning process, to asecond degas chamber (e.g., second degas chamber 132 b) to perform adegas process to dry the second type of substrate, to a second plasmachamber (e.g., second plasma chamber 130 b) to perform a plasma etchprocess to remove unwanted material from the second type of substrate,to a radiation chamber (e.g., radiation chamber 134) to perform aradiation process to weaken adhesive bonds between the chiplets and thesecond type of substrate, and to the bonder chamber. In someembodiments, the radiation process is a UV radiation process. In someembodiments, the radiation process is a heating process.

At 812, the method 800 includes transferring at least some of theplurality of chiplets from the second type of substrate to the firsttype of substrate in the bonder chamber. At 814, the method 800 includesbonding the at least some of the plurality of chiplets to the first typeof substrate in the bonder chamber via a suitable bonding method. Insome embodiments, the first type of substrate is transferred to a secondbonder chamber after bonding the at least some of the plurality ofchiplets to the first type of substrate in the bonder chamber. In someembodiments, a second one of the second type of substrate is transferredto the second bonder chamber. In some embodiments, the second one of thesecond type of substrate includes a plurality of second chiplets havinga size different than the plurality of chiplets. In some embodiments, atleast some of the plurality of second chiplets are transferred andbonded onto the first type of substrate in the second bonder chamber. At816, the method 800 includes loading the first type of substrate withthe bonded plurality of chiplets from a last AMM to a loadport of asecond EFEM (e.g., second EFEM) of the multi-chamber processing tool.

In some embodiments, the first type of substrate may be transferred to athird bonder chamber to bond a third plurality of chiplets to the firsttype of substrate having a different size than the plurality of chipletsand the second plurality of chiplets. Accordingly, the multi-chamberprocessing tool is configured to accommodate N bonder chambers as neededto bond N different type or size of chiplets onto a given substrate. Forexample, the multi-chamber process tool 400 of FIG. 4 includes sixbonder chambers to accommodate six different types or sizes of chiplets.Once bonding is complete, the first type of substrate is shuttled backto a first loadport via the buffers and via the transfer robots of themulti-chamber processing tool. Once bonding is complete, the second typeof substrate may remain in the multi-chamber processing tool forsubsequent processing or subsequent first type of substrate, oralternatively, may be shuttled back to a second loadport via the buffersand via the transfer robots.

In some embodiments, the plurality of chiplets are arranged along afirst layer of chiplets on the first type of substrate. In someembodiments, the first type of substrate with the first layer ofchiplets is transferred to a first plasma chamber of the multi-chamberprocessing tool to perform a supplemental plasma etch process to removeunwanted material. In some embodiments, the first type of substrate issubsequently transferred to the bonding chamber or a second bondingchamber. In the bonding chamber or the second bonding chamber, theplurality of chiplets from the second type of substrate or a pluralityof second chiplets from a one of the second type of substrate aretransferred onto the first layer along a second layer of chiplets. Thesecond layer of chiplets may comprise the same type and size of chipletsas the first layer of chiplets. Alternatively, the second layer ofchiplets may comprise at least one of a different type or size ofchiplets than the first layer of chiplets.

In some embodiments, the first type of substrate and the second type ofsubstrate are processed concurrently in the multi-chamber processingtool. In some embodiments, multiple first type of substrates andmultiple second type of substrates are processed in the multi-chamberprocessing tool concurrently to advantageously increase processingthroughput. The multi-chamber process tool may include a second EFEM(e.g., second EFEM 502) or a third EFEM to provide additional loadportsand scanning stations to advantageously increase processingcapabilities. For example, at least one of a first one of the first typeof substrate or a first one of the second type of substrate may undergoa wet clean process, while a second one of the first type of substrateis undergoing a degas process, and a third one of the first type ofsubstrate and a second one of the second type of substrate areundergoing a bonding process. In another example, a first one of thefirst type of substrate and a second one of the first type of substratemay undergo a wet clean process, while a third one of the first type ofsubstrate is undergoing a degas process and a fourth one of the firsttype of substrate and a fifth one of the first type of substrate areundergoing a bonding process with a first one of the second type ofsubstrate and a second one of the second type of substrate,respectively. These are non-limiting examples of how multiple first typeof substrates and second type of substrates may be processed in themulti-chamber processing tool.

In some embodiments, the multi-chamber processing tool may be configuredto perform a plasma dicing or singulation process using a plasma chamberof the multi-chamber processing tool prior to bonding chiplets to thefirst type of substrate. In some embodiments, the multi-chamberprocessing tool may be configured to perform additional cleaning orsubstrate plating processes before or after bonding chiplets to thefirst type of substrate. The plurality of AMMs generally can interfacewith the EFEM to hand off substrates to one or more process chambersassociated with each of the AMMs. Accordingly, a suitable number of AMMsand associated process chambers may be used to accommodate a desiredthroughput of processed substrates.

FIG. 9 depicts a schematic top view of a multi-chamber processing toolfor bonding chiplets to a substrate in accordance with at least someembodiments of the present disclosure. The multi-chamber processing tool900 is similar to the multi-chamber processing tool 200 except that themulti-chamber processing tool 900 includes a fourth AMM 110 d and asecond EFEM 502 coupled to the fourth AMM 110 d on a side opposite theEFEM 102. In some embodiments, a radiation chamber 134 is coupled to thefourth AMM 110 d and the second EFEM 502 is coupled to the radiationchamber 134. Such an arrangement advantageously allows for the firsttype of substrate 112 a and the second type of substrate 112 b to enterthe multi-chamber processing tool 900 from the EFEM 102 and exit fromthe second EFEM 502, improving throughput. The second EFEM 502 may beincorporated in any of the tools disclosed herein.

In some embodiments, one or more of the transfer chambers 116 mayinclude a pre-aligner 910 configured to rotate and align the first typeof substrate 112 a or the second type of substrate 112 b in a desiredorientation. The pre-aligner 910 may be separate from the buffer 120. Insome embodiments, the transfer chambers 116 associated with AMMs 110having a bonder chamber 140 may include the pre-aligner 910. In someembodiments, the radiation chamber 134 may be configured to rotate theone or more types of substrates 112 disposed therein.

FIG. 10 depicts a schematic top view of a multi-chamber processing tool1000 for bonding chiplets to a substrate in accordance with at leastsome embodiments of the present disclosure. The multi-chamber processingtool 1000 may be similar to the multi-chamber processing tool 900 exceptthat the multi-chamber processing tool 1000 includes multiple EFEMs 102.In some embodiments, any of the multi-chamber processing tools disclosedherein may include multiple EFEMs 102 on one end of the tool and asecond EFEM on another end of the tool, for example, as shown in FIG.10. Multiple ones of the EFEM 102 advantageously allow for increasingthe capacity of the one or more loadports and thus increase throughput.Multiple ones of the EFEM 102 advantageously provide additionalloadports to facilitate additional die types. For example, one EFEM 102may include two loadports for the first type of substrates 112 a and twoloadports for the second type of substrates 112 b, and another one ofthe EFEM 102 may include four loadports for the second type ofsubstrates 112 b. The second type of substrates 112 b may includedifferent die types and sizes.

In some embodiments, a transfer chamber 116 may be disposed between eachof the EFEMs 102 and the first AMM 110 a. In some embodiments, thetransfer chamber 116 may include one or more shelves 1010 configured tohold and rotate the one or more types of substrates 112. In someembodiments, the transfer chamber may include one or more of the one ormore shelves 1010 on either side of a transfer robot 126 disposed in thetransfer chamber 116. The transfer robot 126 may be configured totransfer substrates 112 from the one or more shelves 1010 to the firstAMM 110 a.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof.

1. A multi-chamber processing tool for processing substrates,comprising: A first equipment front end module (EFEM) having one or moreloadports for receiving one or more types of substrates, a second EFEMhaving one or more loadports for receiving one or more types ofsubstrates on a side of the multi-chamber processing tool opposite thefirst EFEM; and a plurality of atmospheric modular mainframes (AMMs)coupled to each other and having a first AMM coupled to the first EFEMand a last AMM coupled to the second EFEM, wherein each of the pluralityof AMMs include a transfer chamber and one or more process chamberscoupled to the transfer chamber, wherein the transfer chamber includes abuffer configured to hold a plurality of the one or more types ofsubstrates, and wherein the transfer chamber includes a transfer robotconfigured to transfer the one or more types of substrates between thebuffer, the one or more process chambers, and a buffer disposed in anadjacent AMM of the plurality of AMMs.
 2. The multi-chamber processingtool of claim 1, wherein the one or more loadports of the first EFEMinclude one or more first loadports for receiving a first type ofsubstrate and one or more second loadports for receiving a second typeof substrate having a plurality of chiplets, and wherein the one or moreprocess chambers of each of the plurality of AMMs include at least oneof a wet clean chamber, a plasma chamber, a degas chamber, a radiationchamber, or a bonder chamber such that the multi-chamber processing toolincludes at least one wet clean chamber, at least one plasma chamber, atleast one degas chamber, at least one radiation chamber, and at leastone bonder chamber.
 3. The multi-chamber processing tool of claim 2,wherein the one or more process chambers of a first AMM includes atleast one of a plasma chamber or a degas chamber and includes a wetclean chamber, and a last AMM of the plurality of AMMs include one ormore bonder chambers configured to remove the plurality of chiplets fromthe second type of substrate and bond the plurality of chiplets onto thefirst type of substrate.
 4. The multi-chamber processing tool of claim2, wherein the at least one wet clean chamber includes a first wet cleanchamber for cleaning the first type of substrate and a second wet cleanchamber for cleaning the second type of substrate, wherein the at leastone plasma chamber includes a first plasma chamber for processing thefirst type of substrate and a second plasma chamber for processing thesecond type of substrate, and wherein the at least one degas chamberincludes a first degas chamber for processing the first type ofsubstrate and a second degas chamber for processing the second type ofsubstrate.
 5. The multi-chamber processing tool of claim 1, wherein thetransfer chamber is a non-vacuum chamber.
 6. The multi-chamberprocessing tool of claim 1, wherein the plurality of AMMs include one ormore AMMs having one or more bonder chambers disposed between the firstAMM and a last AMM.
 7. The multi-chamber processing tool of claim 1,wherein a plurality of AMMs comprise a first AMM coupled to the firstEFEM, a second AMM coupled to the first AMM at one end and a junctionmodule at an opposite end, a third AMM and a fourth AMM coupled to thejunction module at opposite sides of the junction module, and a fifthAMM coupled to the fourth AMM at an end opposite the junction module,wherein the junction module includes a buffer and a transfer robot. 8.The multi-chamber processing tool of claim 1, wherein the second EFEMincludes an EFEM robot; and wherein the plurality of AMMs are arrangedin a linear or U-shaped configuration.
 9. The multi-chamber processingtool of claim 1, wherein the first EFEM includes a scanning stationhaving a substrate ID reader.
 10. A multi-chamber processing tool forprocessing a substrate, comprising: a first equipment front end module(EFEM) having one or more first loadports for receiving a first type ofsubstrate, one or more second loadports for receiving a second type ofsubstrate having a plurality of chiplets, and a EFEM robot configured totransfer the first type of substrate and the second type of substrate; asecond EFEM having one or more second loadports for receiving the firsttype of substrate, one or more second loadports for receiving a secondtype of substrate having a plurality of chiplets, and an EFEM robotconfigured to transfer the first type of substrate and the second typeof substrate; and a plurality of atmospheric modular mainframes (AMMs)coupled to each other and having a first AMM coupled to the first EFEMand a last AMM coupled to the second EFEM, wherein each of the pluralityof AMMs include a transfer chamber and a one or more process chamberscomprising at least one of a wet clean chamber, a plasma chamber, adegas chamber, a radiation chamber, or a bonder chamber, coupled to thetransfer chamber, wherein the transfer chamber includes a bufferconfigured to hold one or more of the first type of substrates and oneor more of the second type of substrates, and wherein the transferchamber includes a transfer robot configured to transfer the first typeof substrate and the second type of substrate between the buffer, theone or more process chambers, and a buffer disposed in an adjacent AMMof the plurality of AMMs; and wherein the one or more process chambersof a first AMM of the plurality of AMMs includes at least one of aplasma chamber or a degas chamber and includes a wet clean chamber, asecond AMM of the plurality of AMMs coupled to the first AMM includes atleast one of a plasma chamber or a degas chamber, and a third AMM of theplurality of AMMs coupled to the second AMM includes one or more bonderchambers configured to remove the plurality of chiplets from the secondtype of substrate and bond the plurality of chiplets onto the first typeof substrate.
 11. The multi-chamber processing tool of claim 10, whereinthe third AMM includes two bonder chambers, wherein a first of the twobonder chambers is configured to remove and bond chiplets having a firstsize and a second of the two bonder chambers is configured to remove andbond chiplets having a second size.
 12. The multi-chamber processingtool of claim 10, wherein the buffer is configured to rotate to alignthe second type of substrate.
 13. The multi-chamber processing tool ofclaim 10, wherein the EFEM robot and the transfer robot include firstend effectors for handling the first type of substrate and second endeffectors for handling the second type of substrate.
 14. Themulti-chamber processing tool of claim 10, wherein the transfer robot isconfigured for rotational and linear movement within the transferchamber.
 15. A method of bonding a plurality of chiplets onto asubstrate, comprising: loading a first type of substrate onto a firstloadport of an equipment front end module (EFEM) of a multi-chamberprocessing tool having a plurality of atmospheric modular mainframes(AMMs); using an EFEM robot to transfer the first type of substrate to afirst buffer disposed in a first AMM coupled to the EFEM; seriallytransferring the first type of substrate from the first buffer to afirst wet clean chamber to perform a cleaning process, to a first degaschamber to perform a degas process to dry the first type of substrate,to a first plasma chamber to perform a plasma etch process to removeunwanted material form the first type of substrate, and to a bonderchamber; using the EFEM robot to transfer a second type of substrate,having a plurality of chiplets, to the first buffer; seriallytransferring the second type of substrate from the first buffer to asecond wet clean chamber to perform a cleaning process, to a seconddegas chamber to perform a degas process to dry the second type ofsubstrate, to a second plasma chamber to perform a plasma etch processto remove unwanted material from the second type of substrate, to aradiation chamber to perform a radiation process to weaken bonds betweenthe plurality of chiplets and second type of substrate, and to thebonder chamber; transferring at least some of the plurality of chipletsfrom the second type of substrate to the first type of substrate in thebonder chamber; bonding the at least some of the plurality of chipletsto the first type of substrate in the bonder chamber, and loading thefirst type of substrate with the bonded plurality of chiplets from alast AMM to a loadport of a second EFEM of the multi-chamber processingtool.
 16. The method of claim 15, further comprising: using the EFEMrobot to transfer the first type of substrate and the second type ofsubstrate to a scanning station in the first EFEM, prior to transferringto the first buffer, to record identifying information to determineprocess steps based on the recorded identifying information.
 17. Themethod of claim 15, further comprising transferring the first type ofsubstrate to a second bonder chamber; transferring a second one of thesecond type of substrate to the second bonder chamber, wherein thesecond one of the second type of substrate includes a plurality ofsecond chiplets having a size different than the plurality of chiplets;and transferring at least some of the plurality of second chiplets ontothe first type of substrate.
 18. The method of claim 15, wherein theplurality of chiplets are arranged along a first layer of chiplets onthe first type of substrate and further comprising: transferring thefirst type of substrate with the first layer of chiplets to the firstplasma chamber to perform a supplemental plasma etch process to removeunwanted material; transferring the first type of substrate to thebonding chamber or a second bonding chamber; and transferring theplurality of chiplets from the second type of substrate or a pluralityof second chiplets from a second one of the second type of substrateonto the first layer of chiplets in the bonding chamber or secondbonding chamber.
 19. The method of claim 15, wherein the first type ofsubstrate and the second type of substrate are processed concurrently.20. The method of claim 15, wherein multiple first type of substratesand multiple second type of substrates are processed in themulti-chamber processing tool concurrently.